Revolution in oxide electronics toward next generation flexible electronics

Obsidian sensors Inc


Date: 2018-03-15
Time: 2:00pm
Location: Jacobs Hall (EBUI) Booker #2512, UC San Diego

Guest Speaker: Kenji Nomura
Principle engineer at Obsidian sensors Inc


It is indisputable that a critical breakthrough on modern optoelectronics lays the development of quantum effect devices originated from quantum tunneling and quantum confinement effects in superlattice and hetero-interface structures. These devices have been mainly developed using covalent semiconductor such as Si and III-IV compound semiconductors so far.  However, it is very difficult to fabricate such devices at low temperatures that allow to use flexible plastics as substrate, although the development of flexible quantum device is vital to advance next generation flexible electronics. Oxide semiconductor, especially amorphous oxide semiconductor, is a strong candidate to develop flexible and low-cost quantum devices such as high electron mobility transistors because it has several advantages such as low temperature processability and wide compatibility of processing including solution process. 

In this seminar, I will present the current status and future perspectives for oxide semiconductor device technology. I will firstly explain what, how and why oxide semiconductor is different from conventional semiconductors. Then I will show material design and device applications for amorphous oxide semiconductors based on my research activity. Finally, I would like to discuss the opportunity of oxide semiconductors in future flexible electronics.


Kenji Nomura is principle engineer at Obsidian sensors Inc. He received the B.E. degree in Applied Chemistry and the M.E. degree in Material Science engineering from the Nagoya Institute of Technology, Japan, in 1999, and 2001, respectively, and the Ph.D. degrees in Material science engineering from the Tokyo Institute of Technology (Tokyo Tech.), Japan, in 2004. After that, he joined the Material science laboratory, Tokyo Tech., as a post-doctoral researcher, and in 2010 became an Associate Professor in Frontier research center. He developed several key oxide semiconductor materials for TFT application and invented high performance crystalline/amorphous oxide-TFTs. Since June 2012, he joined Qualcomm Inc., He has been working on oxide electronic material development projects. His current research interests include oxide electronics and flexible electronics, especially, oxide semiconductor device application such as TFT, LED and sensor.  He has 115 academic journal papers on material science and semiconductor device physics and his h-index is 62.